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MMDF1300 Power MOSFET 3 Amps, 25 Volts
Complementary SO-8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. * Low RDS(on) Provides Higher Efficiency and Extends Battery Life * Logic Level Gate Drive - Can be Driven by Logic ICs * Miniature SO-8 Surface Mount Package - Saves Board Space * Diode Exhibits High Speed, with Soft Recovery
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous N-Channel P-Channel Drain Current - Pulsed N-Channel P-Channel Operating and Storage Temperature Range Total Power Dissipation @ TA = 25C Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 20 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 25 mH, RG = 25 W) Thermal Resistance - Junction-to-Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 sec. Symbol VDSS VGS ID 3.0 2.0 IDM 9.0 6.0 TJ, Tstg PD EAS -65 to +150 1.8 C Watts mJ Apk Value 25 20 Unit Vdc Vdc Adc 8 1 1300 L Y WW = Device Code = Location Code = Year = Work Week SO-8, Dual CASE 751 STYLE 11 1300 LYWW
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3 AMPERES 25 VOLTS RDS(on) = 100 mW (N-Channel) RDS(on) = 210 mW (P-Channel)
N-Channel D P-Channel D
G S
G S
MARKING DIAGRAM
PIN ASSIGNMENT
113 Source-1 1 2 3 4 8 7 6 5 Drain-1 Drain-1 Drain-2 Drain-2
RJA TL
66.3 260
C/W C
Gate-1 Source-2 Gate-2
1. Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), 10 sec. max. Device MMDF1300R2
Top View
ORDERING INFORMATION
Package SO-8 Shipping 2500 Tape & Reel
(c) Semiconductor Components Industries, LLC, 2001
1
March, 2001 - Rev. 1
Publication Order Number: MMDF1300/D
MMDF1300
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS (Notes 2. & 3.) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 2.0 Adc) Drain-to-Source On-Resistance (VGS = 4.5 Vdc, ID = 1.0 Adc) Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge td(on) (VDD = 10 Vdc, ID = 2.0 Adc, VGS = 4.5 Vdc, RG = 6.0 ) tr td(off) tf QT Q1 Q2 Q3 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Negative signs for P-Channel device omitted for clarity. 4. Switching characteristics are independent of operating junction temperature. (N) (P) (N) (P) (N) (P) (N) (P) (N) (P) (N) (P) (N) (P) (N) (P) - - - - - - - - - - - - - - - - 18 14 98 95 16 22 30 40 3.3 7.0 1.2 1.2 2.0 2.5 1.9 3.5 36 28 196 180 32 45 60 80 5.0 10 - - - - - - nC ns (VDS = 16 Vdc, Vd VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss (N) (P) (N) (P) (N) (P) - - - - - - 215 200 111 100 30 40 301 300 158 160 60 75 pF VGS(th) RDS(on) RDS(on) (N) (P) gFS (N) (P) - - 1.0 1.0 0.13 0.30 - - 0.16 0.375 - - mhos (N) (P) (N) (P) 1.0 1.0 - - 1.5 2.0 0.09 0.16 2.0 3.0 0.10 0.21 Vdc Ohms Ohms V(BR)DSS - IDSS IGSS (N) (P) - 30 - - - - - - - - 1.0 1.0 100 Adc nAdc Vdc Symbol Polarity Min Typ Max Unit
(VDS = 16 Vdc, ID = 2.0 Adc, 2 0 Adc VGS = 4.5 Vdc)
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MMDF1300
ELECTRICAL CHARACTERISTICS - continued (TA = 25C unless otherwise noted)
Characteristic SOURCE-DRAIN DIODE CHARACTERISTICS (Note 5.) Forward On-Voltage (Note 6.) Reverse Recovery Time (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc) VSD trr (N) (ID = 2.0 Adc, VGS = 0 Vdc dIS/dt = 100 A/s) Reverse Recovery Stored Charge 5. Negative signs for P-Channel device omitted for clarity. 6. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. ta tb QRR (N) (P) (N) (P) (N) (P) (N) (P) (N) (P) - - - - - - - - - - 1.0 1.3 23 20 18 13 5.0 7.0 0.02 0.02 1.4 1.7 - - - - - - - - C Vdc ns Symbol Polarity Min Typ Max Unit
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MMDF1300
PACKAGE DIMENSIONS
SO-8 CASE 751-07 ISSUE V
-X- A
8 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244
B
1 4
S
0.25 (0.010)
M
Y
M
-Y- G C -Z- H D 0.25 (0.010)
M SEATING PLANE
K
N
X 45 _
0.10 (0.004)
M
J
ZY
S
X
S
STYLE 11: PIN 1. 2. 3. 4. 5. 6. 7. 8.
MiniMOS is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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MMDF1300/D

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